Gas-Surface Dynamics and Profile Evolution during Etching of Silicon

Gas-Surface Dynamics and Profile Evolution during Etching of Silicon.

Scattering of energetic F atoms on a fluorinated Si surface is studied by molecular beam methods. The energy transfer closely follows hard-sphere collision kinematics. Energy and angular distributions of unreacted F atoms suggest significant multiple-bounce scattering in addition to single-bounce scattering and trapping desorption. An empirical model of the atom-surface interaction dynamics is ...

Surface chemistry during plasma etching of silicon

Angle-resolved x-ray photoelectron spectroscopy ( X P S ) and laserinduced thermal desorption (LD), combined with laser-induced fluorescence (LIF) detection, were used to study the etching of olycrystalline Si (poly-Si) and single crystal Si(lO0) in high density (1-2 x 10fl ions/cm3), low presswe (0.510 mTorr) C12MBr-containing, helical resonator plasmas. The XPS measurements on both unmasked S...

the study of bright and surface discrete cavity solitons dynamics in saturable nonlinear media

امروزه سالیتون ها بعنوان امواج جایگزیده ای که تحت شرایط خاص بدون تغییر شکل در محیط منتشر می-شوند، زمینه مطالعات گسترده ای در حوزه اپتیک غیرخطی هستند. در این راستا توجه به پدیده پراش گسسته، که بعنوان عامل پهن شدگی باریکه نوری در آرایه ای از موجبرهای جفت شده، ظاهر می گردد، ضروری است، زیرا سالیتون های گسسته از خنثی شدن پراش گسسته در این سیستم ها بوسیله عوامل غیرخطی بوجود می آیند. گسستگی سیستم عامل...

Unraveling the Morphological Evolution and Etching Kinetics of Porous Silicon Nanowires During Metal-Assisted Chemical Etching

Many potential applications of porous silicon nanowires (SiNWs) fabricated with metal-assisted chemical etching are highly dependent on the precise control of morphology for device optimization. However, the effects of key etching parameters, such as the amount of deposited metal catalyst, HF-oxidant molar ratio (χ), and solvent concentration, on the morphology and etching kinetics of the SiNWs...

Etching of Silicon Carbide Using Chlorine Trifluoride Gas